MTP5N40E |
RFQ for MTP5N40E |
![]() |
| Product | Manufacturers | Pack | D/C |
| MTP5N40E | - | TO-220 | 06+ |
Features |
| • Avalanche Energy Capability Specified at Elevated Temperature• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
400 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
400 |
Vdc |
| GatetoSource Voltage - Continuous - Nonrepetitive |
VGS VGSM |
± 20 ±40 |
Vdc Vpk |
| Drain Current - Continuous - Pulsed |
ID IDM |
5.0 10 |
Adc |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |